Previously, I had indicated how detrimental stochastic effects at pitches below 50 nm should lead to reconsidering the practical resolution limit for EUV lithography [1].
Thank you for sharing your expertise and insights with us.
I'm glad you appreciate it and thank you for your support!
After 30 years in Lithography business, I acknowledge and appreciate your efforts and contributions to advance the lithography science.
Best wishes,
Thank you for sharing this ...
EUV double patterning even for 40 nm pitch is not free from stochastic behavior. https://www.youtube.com/watch?v=DCE3C2i-LKY
Electron blur in EUV resist for 7nm (36 nm and 40 nm pitches) still has large stochastic impact.
https://www.youtube.com/watch?v=IZF1DKBdFqQ
Thank you for sharing your expertise and insights with us.
I'm glad you appreciate it and thank you for your support!
After 30 years in Lithography business, I acknowledge and appreciate your efforts and contributions to advance the lithography science.
Best wishes,
Thank you for sharing this ...
EUV double patterning even for 40 nm pitch is not free from stochastic behavior. https://www.youtube.com/watch?v=DCE3C2i-LKY
Electron blur in EUV resist for 7nm (36 nm and 40 nm pitches) still has large stochastic impact.
https://www.youtube.com/watch?v=IZF1DKBdFqQ