The release and scattering of photoelectrons and secondary electrons in EUV resists has often been glossed over in most studies in EUV lithography, despite being a fundamental factor in the image formation.
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Predicting Stochastic Defectivity from…
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The release and scattering of photoelectrons and secondary electrons in EUV resists has often been glossed over in most studies in EUV lithography, despite being a fundamental factor in the image formation.