The release and scattering of photoelectrons and secondary electrons in EUV resists has often been glossed over in most studies in EUV lithography, despite being a fundamental factor in the image formation.
Predicting Stochastic Defectivity from…
The release and scattering of photoelectrons and secondary electrons in EUV resists has often been glossed over in most studies in EUV lithography, despite being a fundamental factor in the image formation.