The latest significant development in EUV lithography technology is the arrival of High-NA systems.
Interesting findings at SPIE this year, showing EUV photoelectrons travel further in a more exposure-sensitive polymer (15 nm vs. 5 nm), as indicated by outgassing resist thickness loss. Chemical effects are expected to extend even further. https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12957/129570C/Outgassing-bond-structure-and-thickness-in-polymers-under-electron-exposure/10.1117/12.3010981.short#_=_
Interesting findings at SPIE this year, showing EUV photoelectrons travel further in a more exposure-sensitive polymer (15 nm vs. 5 nm), as indicated by outgassing resist thickness loss. Chemical effects are expected to extend even further. https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12957/129570C/Outgassing-bond-structure-and-thickness-in-polymers-under-electron-exposure/10.1117/12.3010981.short#_=_